Anomalous cells with low reset resistance in phase-change-memory arrays

IEEE Electron Device Letters

Volumn 28, Issue 10, 2007, Pages 865-867

  Mantegazza, Davide ^a   Ielmini, Daniele ^a   Pirovano, Agostino ^b   Lacaita, Andrea L ^a,c  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

^c CNR   (Italy)

Author keywords

Phase change memories (PCMs); Programming distributions; Reliability modeling; Statistical reliability

Indexed keywords

CELLULAR ARRAYS; CHALCOGENIDES; COMPUTER SIMULATION; OPTIMIZATION; QUENCHING; RELIABILITY ANALYSIS; STATISTICAL METHODS;

PROGRAMMING DISTRIBUTIONS; RELIABILITY MODELING;

PHASE CHANGE MEMORY;

EID: 34948905228     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.905367     Document Type: Article

References (11)

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