A high-throughput contact-hole resolution metric for photoresists: Full-process sensitivity study

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Anderson, Christopher N ^a   Naulleau, Patrick P ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

EUV; Extreme ultraviolet; Lithography; Photoresist; Resolution

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY; LASER PULSES; PHOTORESISTORS; PHOTORESISTS; SURFACE TREATMENT;

CHEMICALLY AMPLIFIED PHOTORESISTS; DIRECT OBSERVATIONS; EUV; EXPOSURE TOOLS; EXTRACTION PROCESSES; EXTREME ULTRAVIOLET; EXTREME ULTRAVIOLETS; INTRINSIC RESOLUTIONS; POTENTIAL ERRORS; PROCESS ERRORS; RESOLUTION; SEMATECH; SENSITIVITY STUDIES;

ULTRAVIOLET DEVICES;

EID: 57349162015     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.768551     Document Type: Conference Paper

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