A novel method for characterizing resist performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 1, 2007, Pages

  Van Steenwinckel, D ^a   Gronheid, R ^b   Lammers, J H ^c   Myers, A M ^b,d   Van Roey, F ^b   Willems, P ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b IMEC   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d INTEL CORPORATION   (United States)

Author keywords

Chemically amplified photoresist; Figure of Merit; KLUP; Line width roughness; Resist performance; Resist sensitivity; Resolution

Indexed keywords

DIFFUSION; EXTREME ULTRAVIOLET LITHOGRAPHY; IMAGING SYSTEMS; LITHOGRAPHY; OPTICAL RESOLVING POWER; WAVELENGTH;

CHEMICALLY AMPLIFIED PHOTORESIST; FIGURE OF MERIT; LINE WIDTH ROUGHNESS; RESIST PERFORMANCE;

PHOTORESISTS;

EID: 35148850685     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712861     Document Type: Conference Paper

References (13)

1. D. Van Steenwinckel, J. H. Lammers, L. H. A. Leunissen, and J. A. J. M. Kwinten, "Lithographic Importance of Acid Diffusion in Chemically Amplified Resists", Proc. SPIE, 5753, 269-280, 2005.
2. D. Van Steenwinckel, J. H. Lammers, T. Koehler, R. L. Brainard, and P. Trefonas, "Resist Effects at Small Pitches", J. Vac. Sci Technol. B, 24(1), 316-320, 2006.
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4. d can be considered as the length scale of the image blurring due to the resist process. For a chemically amplified process, this is mainly attributed to acid diffusion. Other mechanisms, such as secondary electron blurring in EUV lithography may also be operative and contribute to the image blur and can be treated in the same way. Therefore the method that is described in this paper may also be applied to non-chemically amplified resist processes even though the blurring mechanism may be different.
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6. rd International Symposium on Immersion Lithography, Kyoto, Japan, 2006.
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