Impact of resist blur on MEF, OPC and CD control

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5377, Issue PART 1, 2004, Pages 141-149

  Brunner, T ^a   Fonseca, C ^a   Seong, N ^a   Burkhardt, M ^a  

^a IBM   (United States)

Author keywords

CD control; Chemically amplified resist; High NA imagery; High resolution lithography; Lithography; MEF; Microlithography; OPC; Resist blur; Resist models; Simulation

Indexed keywords

CHEMICALLY AMPLIFIED RESISTS; CRITICAL DIMENSION (CD) CONTROL; HIGH NA IMAGERY; HIGH RESOLUTION LITHOGRAPHY; MASK ERROR FACTORS (MEF); MEF; OPC; RESIST BLUR;

COMPUTER SIMULATION; IMAGING SYSTEMS; INTERFEROMETRY; MASKS; MATHEMATICAL MODELS; MONTE CARLO METHODS;

PHOTORESISTS;

EID: 3843054532     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537472     Document Type: Conference Paper

References (12)

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