Confinement effects on the spatial extent of the reaction front in ultrathin chemically amplified photoresists

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2699-2704

  Goldfarb, Darío L ^a   Angelopoulos, Marie ^a   Lin, Eric K ^b   Jones, Ronald L ^b   Soles, Christopher L ^b   Lenhart, Joseph L ^b   Wu, Wen Il ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; BINDING ENERGY; DIFFERENTIAL SCANNING CALORIMETRY; DIFFUSION; FREE RADICAL POLYMERIZATION; INTERFACES (MATERIALS); LITHOGRAPHY; ORGANIC POLYMERS; SPIN COATING; TEMPERATURE; THICKNESS MEASUREMENT;

CHEMICALLY AMPLIFIED PHOTORESIST SYSTEM; CONFINEMENT EFFECTS; FOROUHI-BLOOMER EQUATIONS; PHOTOACID GENERATOR; POSTEXPOSURE BAKING; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETER;

PHOTORESISTS;

EID: 0035519160     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1421559     Document Type: Article

References (17)

1. J. Nakamura, H. Ban, K. Deguchi and A. Tanaka, Jpn. J. Appl. Phys., Part 1 30, 2619 (1991).
2. T. H. Fedynyshyn, J. W. Thackeray, J. H. Georger, and M. D. Denison, J. Vac. Sci. Technol. B 12, 3888 (1994).
3. T. Itani, H. Yoshino, N. Fujimoto, and K. Kasama, J. Vac. Sci. Technol. B 14, 3026 (1995).
4. T. Itani, H. Yoshino, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama, J. Vac. Sci. Technol. B 14, 4226 (1996).
5. T. Itani, H. Yoshino, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama, Jpn. J. Appl. Phys., Part 1 35, 6501 (1996).
6. T. Itani, H. Yoshino, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama, J. Vac. Sci. Technol. B 15, 2541 (1997).
7. T. Itani, Y. Yoshino, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama, Microelectron. Eng. 35, 149 (1997).
8. T. Itani, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama, Microelectron. Eng. 41/42, 363 (1998).
9. L. Schlegel, T. Ueno, N. Hayashi, and T. Iwayanagi, Jpn. J. Appl. Phys., Part 1 30, 3132 (1991).
10. J.-B. Kim, J.-H. Choi, Y.-G. Kwon, M.-N. Hung, and K.-H. Chang, Polymer 40, 1087 (1999).
11. D. S. Fryer, S. Bollepali, J. J. de Pablo, and P. F. Nealey, J. Vac. Sci. Technol. B 17, 3351 (1999).
12. S. V. Postnikov, M. D. Stewart, H. Vi Tran, M. A. Nierode, D. R. Medeiros, T. Cao, J. Byers, S. E. Webber, and C. G. Willson, J. Vac. Sci. Technol. B 17, 3335 (1999).
13. M. D. Stewart, M. H. Sommerwell, H. Vi Tran, S. V. Postnikov, and C. G. Willson, Proc. SPIE 3999, 665 (2000).
14. P. M. Dentinger, B. Lu, J. W. Taylor, S. J. Bukofsky, G. D. Feke, D. Hessman, and R. D. Grober, J. Vac. Sci. Technol. B 16, 3767 (1998).
15. B. Lu, J. W. Taylor, F. Cerrina, C. P. Soo, and A. J. Bourdillon, J. Vac. Sci. Technol. B 17, 3345 (1999).
16. E. Richter, S. Hien, and M. Sebald, Microelectron. Eng. 53, 479 (2000).
17. E. Croffie, M. Cheng, and A. Neureuther, J. Vac. Sci. Technol. B 17, 3339 (1999).