Very low sheet resistance AlN/GaN high electron mobility transistors

2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Volumn , Issue , 2009, Pages

  Chang, C Y ^a   Anderson, T J ^a   Ren, F ^a   Pearton, S J ^a   Dabiran, A M ^b   Wowchak, A M ^b   Cui, B ^b   Chow, P P ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

AlN GaN Hemts; Ozone treatment

Indexed keywords

ALN/GAN; DEVICE FABRICATIONS; HIGH ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); MAXIMUM FREQUENCY OF OSCILLATIONS; OHMIC METALLIZATION; OZONE TREATMENT; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY; OZONE; SAPPHIRE; SEMICONDUCTOR DEVICE MANUFACTURE; SHEET RESISTANCE; SILICON CARBIDE; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887482288     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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