Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si3N4

Electronics Letters

Volumn 44, Issue 24, 2008, Pages 1428-1429

  Seo, S ^a   Cho, E ^a   Pavlidis, D ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CUTOFF FREQUENCY; DRAIN CURRENT; EPITAXIAL GROWTH; EPITAXIAL LAYERS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; MOLECULAR BEAM EPITAXY; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON;

ALN BARRIERS; CHEMICAL VAPOUR DEPOSITIONS; CURRENT GAINS; GATE LENGTHS; IN-SITU; MAXIMUM DRAIN CURRENT DENSITIES; MAXIMUM OSCILLATION FREQUENCIES; METAL INSULATORS; PEAK EXTRINSIC TRANSCONDUCTANCES; RF CHARACTERISTICS; SAPPHIRE SUBSTRATES; SEMICONDUCTOR FIELD EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 56549084713     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20081998     Document Type: Article

References (5)

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3. Seo, S., Zhao, G.Y., and Pavlidis, D.: ' Power characteristics of AlN/GaN MISFETs on sapphire substrate ', Electron. Lett., 2008, 44, (3), p. 244-245 0013-5194
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5. 4 layer ', Proc. 9th Int. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC), Lodz, Poland, June, 2008