Small signal equivalent circuit modeling for AlGaN/GaN HFET: Hybrid extraction method for determining circuit elements of AlGaN/GaN HFET

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1140-1150

  Fan, Qian ^a   Leach, Jacob H ^a   Morkoc, Hadis ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

Equivalent circuits; Gallium nitride; Heterojunction field effect transistors (HFETs); Parasitic; Small signal

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CAPACITANCE; CIRCUIT SIMULATION; ERRORS; EXTRACTION; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; PARAMETER ESTIMATION; TIMING CIRCUITS;

ALGAN/GAN HETEROJUNCTION; EXTRACTION ALGORITHMS; HETEROJUNCTION FIELD EFFECT TRANSISTOR; LARGE SIGNAL MODELING; PARASITIC; PARASITIC CAPACITANCE; RADIO FREQUENCY APPLICATIONS; SMALL SIGNAL EQUIVALENT CIRCUIT;

EQUIVALENT CIRCUITS;

EID: 77953686220     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2044630     Document Type: Conference Paper

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