AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 280-285

  Nakamura, Fumihiko ^a   Hashimoto, Shigeki ^a   Hara, Masaki ^a   Imanaga, Synji ^a   Ikeda, Masao ^a   Kawai, Hiroji ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Aluminum gallium nitride; Aluminum nitride; Field effect transistor (FET); Heterostructure; MOCVD

Indexed keywords

ATOMIC FORCE MICROSCOPY; GRAIN BOUNDARIES; JUNCTION GATE FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

INSULATED GATE HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (IGHFET);

SEMICONDUCTING FILMS;

EID: 0032477187     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00668-X     Document Type: Article

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