New process for low sheet and ohmic contact resistance of AlN/GaN MOS-HEMTs

European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings

Volumn , Issue , 2010, Pages 306-309

  Taking, S ^a   Khokhar, A Z ^a   MacFarlane, D ^a   Sharabi, S ^a   Dabiran, A M ^b   Wasige, E ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b SVT ASSOCIATES   (United States)

Author keywords

Al2O3; AlN GaN; HEMT; MOS HEMT; Thermal oxidation; Wet etching

Indexed keywords

AL2O3; ALN/GAN; HEMT; MOS-HEMT; THERMAL OXIDATION;

ALUMINUM; CONTACT RESISTANCE; DRAIN CURRENT; DRY ETCHING; ELECTRIC CONTACTORS; FABRICATION; GATE DIELECTRICS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; OHMIC CONTACTS; OXIDATION; PLASMA ETCHING;

WET ETCHING;

EID: 78649552194     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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