Enhanced device performance of AlGaN/GaN HEMTs using thermal oxidation of electron-beam deposited aluminum for gate oxide

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 1443-1446

  Chen, Hongwei ^a   Wang, Jinyan ^a   Xu, Chuan ^a   Yu, Min ^a   Fu, Yang ^a   Dong, Zhihua ^a   Xu, Fujun ^a   Hao, Yilong ^a   Wen, Cheng P ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Algan gan mos hemts; Electron beam evaporation; Leakage current; Thermal oxidation

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; ALGAN/GAN MOS-HEMTS; ATOMIC-LAYER-DEPOSITED; BAND GAPS; DEVICE PERFORMANCE; DIELECTRIC DEPOSITIONS; DRAIN SATURATION CURRENTS; ELECTRON CYCLOTRON RESONANCE PLASMAS; ELECTRON-BEAM; ELECTRON-BEAM EVAPORATION; GATE LEAKAGES; GATE OXIDES; GATE VOLTAGE SWINGS; HIGH FREQUENCIES; HIGH-POWER; HIGH-TEMPERATURE APPLICATIONS; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON-MOBILITY TRANSISTORS; ORDERS OF MAGNITUDES; SIMILAR DESIGNS; THERMAL OXIDATION; X-RAY PHOTOELECTRON SPECTROSCOPIES;

ALUMINA; ALUMINUM; CYCLOTRONS; DRAIN CURRENT; ELECTRODEPOSITION; ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; MOS DEVICES; OXIDATION; PLASMA DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EVAPORATION; TRANSISTORS; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONS;

EID: 60649094998     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734825     Document Type: Conference Paper

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