Ultrathin MBE-Grown AlN/GaN HEMTs with record high current densities

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Cao, Y ^a   Zimmermann, T ^a   Deen, D ^a   Simon, J ^a   Bean, J ^a   Su, N ^a   Zhang, J ^a   Fay, P ^a   Xing, H ^a   Jena, D ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44949124628     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422436     Document Type: Conference Paper

References (4)

1. F. Medjdoub, et al., "Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices," IEDM, pp. 1-4, Dec 2006.
2. I. P. Smorchkova, et al., "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers," Appl. Phys. Lett., vol. 77, pp. 3998, 2000.
3. M. Higashiwaki, T. Mimura, and T. Matsui, "AIN/GaN Insulated-Gate HFETs Using Cat-CVD SiN ," IEEE Electron Device Lett., vol. 27, pp. 719, 2006.
4. Y. Cao, D. Jena. "High-mobility window for two-dimensional electron gases at ultrathin AlN/GaN heterojunctions," Appl. Phys. Lett., vol. 90, pp. 182112, 2007.