A peeling algorithm for extraction of the HBT small-signal equivalent circuit

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 12, 2002, Pages 2804-2810

  Sheinman, Benny ^a   Wasige, Edward ^a,b,c   Rudolph, Matthias ^d   Doerner, Ralf ^d   Sidorov, Victor ^a   Cohen, Shimon ^a   Ritter, Dan ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b MOI UNIVERSITY   (Kenya)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

^d F B I fuer Hoechstfrequenztechnik   (Germany)

Author keywords

Heterojunction bipolar transistors (HBTs); Parameter extraction; Small signal equivalent circuit

Indexed keywords

ALGORITHMS; CAPACITANCE; ELECTRIC NETWORK TOPOLOGY; HETEROJUNCTION BIPOLAR TRANSISTORS; PARAMETER ESTIMATION;

SMALL-SIGNAL CIRCUITS;

EQUIVALENT CIRCUITS;

EID: 0036904813     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.805195     Document Type: Conference Paper

References (20)

1. E. Wasige, B. Sheinman, V. Sidorov, S. Cohen, and D. Ritter, "An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements," in IEEE MTT-S Int. Microwave Symp. Dig., 2002, pp. 733-736.
2. M. Rudolph, R. Doerner, and P. Heymann, "Direct extraction of HBT equivalent-circuit elements," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 82-84, Jan. 1999.
3. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151-1159, July 1988.
4. Y. Gobert, P.J. Tasker, and K.H. Bachem, "A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 149-153, Jan. 1997.
5. S.A. Maas and D. Tait, "Parameter extraction method for heterojunction bipolar transistors," IEEE Microwave Guided Wave Lett., vol. 2, pp. 502-504, Dec. 1992.
6. C.-J. Wei and J.C.M. Hwang, "Direct extraction of equivalent circuit paramters for heterojunction bipolar transistors," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2035-2040, Sept. 1995.
7. S.J. Spiegel, D. Ritter, R.A. Hamm, A. Feygenson, and P.R. Smith, "Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 42, pp. 1059-1064, June 1995.
8. D. Peters, W. Daumann, W. Brockerhoff, R. Reuter, E. Koenig, and F.J. Tegude, "Direct calculation of the HBT small-signal equivalent circuit with special emphasis to the feedback capacitance," in Proc. European Microwave Conf., vol. 2, 1995, pp. 1032-1036.
9. M. Sotoodeh, L. Sozzi, A. Vinay, A. Khalid, Z. Hu, A. Rezazadeh, and R. Mennozzi, "Stepping toward standard methods of small-signal parameter extraction for HBT's," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1139-1151, June 2000.
10. B. Li, S. Prasad, L.-W. Yang, and S.C. Wang, "A semianalytical parameter-extraction procedure for HBT equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 1427-1435, Oct. 1998.
11. U. Schaper and B. Holzapfl, "Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameters," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 493-498, Mar. 1995.
12. D.R. Pehlke and D. Pavlidis, "Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 1139-1151, Dec. 1992.
13. D. Costa, W.U. Liu, and J.S. Harris, "Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit," IEEE Trans. Electron Devices, vol. 38, pp. 2018-2024, Sept. 1991.
14. D.A. Teeter and W.R. Curtice, "Comparison of hybrid Pi and Tee HBT circuit topologies and their relationship to large signal modeling," in IEEE MTT-S Int. Microwave Symp. Dig., 1997, pp. 375-378.
15. T.S. Horng, J.M. Hu, and H.H. Huang, "An extrinsic-inductance independent approach for direct extraction of HBT intrinsic circuit parameters," IEEE Trans. Microwave Theory Tech., vol. 49, pp. 1139-1151, Dec. 2001.
16. Y. Suh, E. Seok, J.-H. Shin, B. Kim, D. Heo, A. Raghavan, and J. Laskar, "Direct extraction method for internal equivalent circuit parameters of the HBT small-signal hybrid-π model," in IEEE MTT-S Int. Microwave Symp. Dig., 2000, pp. 1401-1404.
17. S. Bousnina, P. Mandeville, A.B. Kouki, R. Surridge, and F.M. Ghannouchi, "Direct parameter-extraction method for HBT small-signal model," IEEE Trans. Microwave Theory Tech., vol. 50, pp. 529-536, Feb. 2002.
18. A. Samelis and D. Pavlidis, "DC to high-frequency HBT-model parameter evaluation using impedance block conditioned optimization," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 886-897, June 1997.
19. F. Lenk and M. Rudolph, "New extraction algorithm for GaAs-HBT's with low intrinsic base resistance," in IEEE MTT-S Int. Microwave Symp. Dig., 2002, pp. 725-728.
20. W. Liu, Fundamentals of III-V Devices: HBT's, MESFET's, and HFETs/HEMT's. New York: Wiley, 1999.