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Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 351-354

AlN/GaN Metal Insulator Semiconductor Field Effect Transistor Using Wet Chemical Etching with Hot Phosphoric Acid

(6) Ide, T a Shimizu, M b Suzuki, A c Shen, X Q b Okumura, H b Nemoto, T a

a MEIJI UNIVERSITY (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c TOKAI UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1942521098 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200111)188:1<351::AID-PSSA351>3.0.CO;2-X Document Type: Article

Times cited : (8)

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