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Volumn 11, Issue 5, 2007, Pages 233-237
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MBE-grown ultra-shallow AlN/GaN HFET technology
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM NITRIDE;
DRAIN CURRENT;
ENERGY GAP;
GALLIUM COMPOUNDS;
HETEROJUNCTIONS;
III-V SEMICONDUCTORS;
JUNCTION GATE FIELD EFFECT TRANSISTORS;
MOLECULAR BEAM EPITAXY;
TWO DIMENSIONAL ELECTRON GAS;
DC CHARACTERISTICS;
HIGH FREQUENCY HF;
HIGH POWER APPLICATIONS;
HIGH-SPEED DEVICES;
MAXIMUM DRAIN CURRENT;
POLARIZATION EFFECT;
SHALLOW CHANNELS;
TWO-DIMENSIONAL ELECTRON GAS (2DEG);
WIDE BAND GAP SEMICONDUCTORS;
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EID: 45749132559
PISSN: 19385862
EISSN: 19386737
Source Type: Conference Proceeding
DOI: 10.1149/1.2783877 Document Type: Conference Paper |
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Times cited : (9)
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References (7)
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