Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al 2O3 formed by thermal oxidation of evaporated aluminium

Electronics Letters

Volumn 46, Issue 4, 2010, Pages 301-302

  Taking, S ^a   Banerjee, A ^a   Zhou, H ^a   Li, X ^a   Khokhar, A Z ^a   Oxland, R ^a   McGregor, I ^a   Bentley, S ^a   Rahman, F ^a   Thayne, I ^a   Dabiran, A M ^b   Wowchak, A M ^b   Cui, B ^a   Wasige, E ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CAPACITANCE-VOLTAGE CHARACTERISTICS; CIRCULAR TESTS; GATE BIAS; GATE CONTROL; GATE LENGTH; GATE WIDTHS; HIGH-FREQUENCY APPLICATIONS; HIGH-POWER; LIQUID CHEMICALS; MAXIMUM DRAIN CURRENT; MOS STRUCTURE; PEAK EXTRINSIC TRANSCONDUCTANCE; SIMPLE METHOD; SURFACE PASSIVATION; THERMAL OXIDATION; ULTRA-THIN;

DRAIN CURRENT; GATE DIELECTRICS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; OXIDATION; PASSIVATION;

ALUMINUM;

EID: 77149173143     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.2781     Document Type: Article

References (9)

1. Zimmermann, T., Deen, D., Cao, Y., Simon, J., Fay, P., Jena, D., and Xing, H.G.: ' AlN/GaN insulated-gate HEMTs with 2.3A/mm output current and 480mS/mm transconductance ', IEEE Electron Device Lett., 2008, 29, (7), p. 661-664 10.1109/LED.2008.923318 0741-3106
2. Cao, Y., Zimmermann, T., Deen, D., Simon, J., Bean, J., Su, N., Zhang, J., Fay, P., Xing, H., and Jena, D.: ' Ultrathin MBE-grown AlN/GaN HEMTs with record high current densities ', Int. Semiconductor Device Research Symp., Maryland, USA, 2007, 1 and 2, p. 407-408
3. 4 ', Electron. Lett., 2008, 44, (24), p. 1428-1429 0013-5194
4. Higashiwaki, M., Mimura, T., and Matsui, T.: ' AlN/GaN insulated-gate HFETs using Cat-CVD SiN ', IEEE Electron Device Lett., 2006, 27, (9), p. 719-721 10.1109/LED.2006.881087 0741-3106 (Pubitemid 44355886)
5. Dabiran, A.M., Wowchak, A.M., Osinsky, A., Xie, J., Hertog, B., Cui, B., Look, D.C., and Chow, P.P.: ' Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures ', Appl. Phys. Lett., 2008, 93, (8), id. 082111 0003-6951
6. Chen, H.W., Wang, J.Y., Xu, C., Yu, M., Fu, Y., Dong, Z.H., Xu, F.J., Hao, Y.L., and Wen, C.P.: ' Enhanced device performance of AlGaN/GaN HEMTs using thermal oxidation of electron-beam deposited aluminum for gate oxide ', 9th, Int. Conf. on Solid-State and Integrated-Circuit Technology, Beijing, China, 2008, 1-4, p. 1435-1438
7. 3of different thickness ', Solid-State Electron., 2008, 52, p. 973-979 0038-1101
8. Hashizume, T., Ootomo, S., and Hasegawa, H.: ' Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using utrathin Al2O3 dielectric ', Appl. Phys. Lett., 2003, 83, (14), p. 2952-2954 10.1063/1.1616648 0003-6951
9. Chang, C.Y., Pearton, S.J., Lo, C.F., Ren, F., Kravchenko, I.I., Dabiran, A.M., Wowchak, A.M., Cui, B., and Chow, P.P.: ' Development of enhancement mode AlN/GaN high electron mobility transistors ', Appl. Phys. Lett., 2009, 94, (26), id. 263505 0003-6951