Frequency and breakdown properties of AlGaN/GaN HEMTs

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-January, Issue , 2003, Pages 53-54

  Vertiatchikh, A ^a,b   Schaff, W J ^a   Eastman, L F ^a  

^a Cornell University   (United States)

^b Department of Obstetrics Gynecology   (United States)

Author keywords

Aluminum gallium nitride; Breakdown voltage; Cutoff frequency; Electric breakdown; Fabrication; Frequency measurement; Gallium nitride; HEMTs; MODFETs; Radio frequency

Indexed keywords

CUTOFF FREQUENCY; ELECTRIC BREAKDOWN; FABRICATION; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MODFETS; NITRIDES; TRANSISTORS;

ALGAN/GAN HETEROSTRUCTURES; BREAKDOWN PROPERTY; ELECTRON SATURATION VELOCITY; FREQUENCY MEASUREMENTS; HIGH BREAKDOWN VOLTAGE; HIGH FREQUENCY HF; HIGH POWER APPLICATIONS; RADIO FREQUENCIES;

ALUMINUM GALLIUM NITRIDE;

EID: 34248637121     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.2003.1239902     Document Type: Conference Paper

References (4)

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2. Green B M, Chu K K, Chumbes E M, Smart J A, Shealy J R and Eastman L F 2000 IEEE Electron Device Letters 21 268-270
3. V.Tilak, B.Green, H.Kim, R.Dimitrov, J.Smart, W.Schaff, J.Shealy, L.Eastman, 'Effect of passivation on AlGaN/GaN HEMT device performance', Proc. IEEE Intern. Symp. on Comp. Semicon., Monterey, CA, October 2000
4. G. Dambrine, A.Cappy, F. Heliodore, E. Playez: 'A new method for determining the FET small-signal equivalent circuit', IEEE Transactions on microwave theory and techniques, vol. 36, no.7, July 1988