AlN/GaN insulated-gate HFETs using Cat-CVD SiN

IEEE Electron Device Letters

Volumn 27, Issue 9, 2006, Pages 719-721

  Higashiwaki, Masataka ^a   Mimura, Takashi ^a,b   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

AlN; Catalytic chemical vapor deposition (Cat CVD); Current gain cutoff frequency (fT); GaN; Heterostructure field effect transistor (HFET); Maximum oscillation frequency (fmax); Metal insulator semiconductor (MIS)

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRON GAS; PASSIVATION; TRANSCONDUCTANCE;

CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT-CVD); CURRENT-GAIN CUTOFF FREQUENCY (FT); HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET); MAXIMUM DRAIN CURRENT DENSITY; MAXIMUM OSCILLATION FREQUENCY;

MISFET DEVICES;

EID: 33748483638     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.881087     Document Type: Article

References (7)

1. S. Imanaga and H. Kawai, "Simulation of the piezoelectric effect on the device characteristics of AlGaN/GaN insulated-gate heterostructure field effect transistors," Jpn. J. Appl. Phys., vol. 37, no. 11, pp. 5906-5913, Nov. 1998.
2. S. Imanaga and H. Kawai, "Performance of AlN/GaN heterostructure metal insulator semiconductor field effect transistor based on two-dimensional Monte Carlo simulation," Jpn. J. Appl. Phys., vol. 39, no. 4A, pp. 1678-1682, Apr. 2000.
3. +GaN ohmic contact," Electron. Lett., vol. 34, no. 6, pp. 592-593, Mar. 1998.
4. E. Alekseev, A. Eisenbach, and D. Pavlidis, "Low interface state density AlN/GaN MISFETs," Electron. Lett., vol. 35, no. 24, pp. 2145-2146, Nov. 1999.
5. M. Higashiwaki, N. Hirose, and T. Matsui, "Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier layers," IEEE Electron Device Lett., vol. 26, no. 3, pp. 139-141, Mar. 2005.
6. M. Higashiwaki, N. Onojima, T. Matsui, and T. Mimura, "Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN/GaN heterostructure field-effect transistors," J. Appl. Phys., 2006, to be published.
7. T of 163 GHz using Cat-CVD SiN gate-insulating and passivation layers," IEEE Electron Device Lett., vol. 27, no. 1, pp. 16-18, Jan. 2006.