Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

Solid-State Electronics

Volumn 54, Issue 6, 2010, Pages 613-615

  Deen, D A ^a   Storm, D F ^a   Katzer, D S ^a   Meyer, D J ^a   Binari, S C ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

AlN; GaN; HEMT; Heterostructure; Ohmic contact

Indexed keywords

ALN; ALN BARRIERS; BARRIER THICKNESS; CHLORINE-BASED PLASMA; CONTACT METALLIZATION; DRY-ETCH; GAN; GAN CAP; HEMT; HETEROSTRUCTURES; LINEAR CURRENTS; METALLIZATIONS; MULTI-FACETED STUDY;

CHLORINE; CONTACT RESISTANCE; CRYSTALS; ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLIZING;

OHMIC CONTACTS;

EID: 77950300835     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.11.012     Document Type: Letter

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