Processing methods for low ohmic contact resistance in AlN/GaN MOSHEMTs

2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Volumn , Issue , 2009, Pages

  Chabak, K ^a   Crespo, A ^a   Tomich, D ^a   Langley, D ^a   Miller, V ^a   Trejo, M ^a   Gillespie, J K ^a   Via, G D ^a   Dabiran, A M ^b   Wowchak, A M ^b   Cui, B ^b   Chow, P P ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

ALD; AlN; HEMT; MOSHEMT; Ohmic contacts

Indexed keywords

ALD; ALN; ELECTRONIC TRANSPORT PROPERTIES; LOW-OHMIC CONTACT; MOS-HEMT; OHMIC CONTACT FORMATION; ROOM TEMPERATURE MOBILITY; SHEET CARRIER CONCENTRATION;

ATOMIC LAYER DEPOSITION; CONTACT RESISTANCE; ELECTRIC CONTACTORS; GATE DIELECTRICS; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSPORT PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887455185     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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