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Journal of Crystal Growth

Volumn 322, Issue 1, 2011, Pages 15-22

Wafer-scale selective area growth of gaN hexagonal prismatic nanostructures on c-sapphire substrate

(8) Chen, X J a Hwang, J S b Perillat Merceroz, G a Landis, S a Martin, B a Le Si Dang, D b Eymery, J a Durand, C a

a CEA GRENOBLE (France)

b UNIV GRENOBLE ALPES (France)

Author keywords

A1. Nanostructures; A2. Selective epitaxy; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

A1. NANOSTRUCTURES; A2. SELECTIVE EPITAXY; A3. METALORGANIC VAPOR PHASE EPITAXY; B1. NITRIDES; C-SAPPHIRE; CIRCULAR HOLES; COMPRESSIVE STRAIN; GAN NANOSTRUCTURES; GAN/SAPPHIRE; HIGH QUALITY; HIGH TEMPERATURE; HIGH-TEMPERATURE GROWTH; LATERAL OVERGROWTH; LOW DEFECT DENSITIES; NANOSTRUCTURE SIZE; NEAR BAND EDGE EMISSIONS; NEW PROCESS; SELECTIVE AREA GROWTH; SILICON DOPING; WAFER-SCALE;

DEFECT DENSITY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LATTICE MISMATCH; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; NUCLEATION; SAPPHIRE; SILICON WAFERS; SUBSTRATES; VAPORS;

NANOSTRUCTURES;

EID: 79954584837 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.03.007 Document Type: Article

Times cited : (27)

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