Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy

Journal of Applied Physics

Volumn 86, Issue 8, 1999, Pages 4400-4402

  Yoshikawa, M ^a   Kunzer, M ^a   Wagner, J ^a   Obloh, H ^a   Schlotter, P ^a   Schmidt, R ^a   Herres, N ^a   Kaufmann, U ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001728208     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.371377     Document Type: Article

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