Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth

Journal of Crystal Growth

Volumn 197, Issue 1-2, 1999, Pages 48-53

  Wang, J ^a   Nozaki, M ^a   Ishikawa, Y ^a   Hao, M S ^a   Morishima, Y ^a   Wang, T ^a   Naoi, Y ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

InGaN semiconductors; Lateral overgrowth; MOCVD; Nano structures

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

INDIUM GALLIUM NITRIDE; LATERAL OVERGROWTH;

SEMICONDUCTOR GROWTH;

EID: 0033080109     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00777-5     Document Type: Article

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