Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 237-241

  Leroux, M ^a   Beaumont, B ^a   Grandjean, N ^a   Golivet, C ^a   Gibart, P ^a   Massies, J ^a   Leymarie, J ^b   Vasson, A ^b   Vasson, A M ^b  

^a CRHEA CNRS   (France)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

Luminescence spectra; Photoluminescence; Sapphire

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH; SPECTROSCOPY; STRAIN;

GALLIUM NITRIDE; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); HALIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0008601605     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01874-0     Document Type: Article

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