Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy

Journal of Crystal Growth

Volumn 243, Issue 1, 2002, Pages 129-133

  Kawasaki, Koji ^a,b,c   Nakamatsu, Ikuo ^a,b   Hirayama, Hideki ^b   Tsutsui, Kazuo ^a,c   Aoyagi, Yoshinobu ^a,b,c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Nanopillar; A1. Nanostructures; A2. Selective area growth; A3. Molecular beam epitaxy; B1. Ammonia gas

Indexed keywords

AMMONIA; ASPECT RATIO; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

SELECTIVE AREA GROWTH;

MOLECULAR BEAM EPITAXY;

EID: 0036067766     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01497-5     Document Type: Article

References (15)