Strain dependent facet stabilization in selective-area heteroepitaxial growth of GaN nanostructures

Applied Physics Letters

Volumn 87, Issue 23, 2005, Pages 1-3

  Shahedipour Sandvik, F ^a   Grandusky, J ^a   Alizadeh, A ^b   Keimel, C ^b   Ganti, S P ^b   Taylor, S T ^b   LeBoeuf, S F ^b   Sharma, P ^c  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b GENERAL ELECTRIC COMPANY   (United States)

^c UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN-SAPPHIRE; PYRAMIDAL MORPHOLOGIES;

CRYSTALLINE MATERIALS; CRYSTALLOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; STABILIZATION;

STRAIN;

EID: 28544446000     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2131199     Document Type: Article

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