Progress in GaN-based quantum dots for optoelectronics applications

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 4, 2002, Pages 823-832

  Arakawa, Yasuhiko ^a,b  

^a IEEE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

GaN; Light emitting diodes; Metal organic chemical vapor deposition; Nanostructures; Quantum dots; Semiconductor lasers

Indexed keywords

ATMOSPHERIC PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRANSKI-KRASTANOW GROWTH; THRESHOLD CURRENT;

ELECTRIC CURRENTS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036661973     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.801675     Document Type: Article

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