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Applied Physics Letters

Volumn 97, Issue 24, 2010, Pages

Highly efficient yellow photoluminescence from {11-22} InGaN multiquantum-well grown on nanoscale pyramid structure

(7) Kim, Taek a Kim, Joosung a Yang, Moon Seung a Lee, Sangmoon a Park, Youngsoo a Chung, U In a Cho, Yonghoon b

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; COMPARATIVE STUDIES; EMISSION ENERGIES; GROWTH DIRECTIONS; HEXAGONAL PYRAMIDS; INGAN/GAN MULTI-QUANTUM WELL; INTEGRATED INTENSITIES; LUMINESCENCE EFFICIENCIES; MULTIQUANTUM WELLS; NANO SCALE; NANO-SIZE; PEAK WAVELENGTH; PIEZO-ELECTRIC FIELDS; PYRAMID STRUCTURE; SEMIPOLAR; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; TEMPERATURE INCREASE;

GALLIUM NITRIDE; PHOTOLUMINESCENCE; PIEZOELECTRICITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78650363866 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3524524 Document Type: Article

Times cited : (39)

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