X-ray in situ observation of semiconductor heteroepitaxy: From surface reconstruction to island growth

Semiconductor Science and Technology

Volumn 26, Issue 6, 2011, Pages

  Schulli T U ^a,b  

^a CEA GRENOBLE   (France)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL PROCESS; GROWTH PHASIS; HETEROEPITAXIAL GROWTH; IN-DEPTH ANALYSIS; IN-SITU CHARACTERIZATION; IN-SITU OBSERVATIONS; ISLAND GROWTH; NONDESTRUCTIVE METHODS; OPTIMUM GROWTH CONDITIONS; SEMICONDUCTOR HETEROEPITAXY; SI(0 0 1);

EPITAXIAL GROWTH; GERMANIUM; X RAYS;

SEMICONDUCTOR GROWTH;

EID: 79953882569     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/6/064003     Document Type: Article

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