Liquid phase epitaxy set-up designed for in situ X-ray study of SiGe island growth on (001) Si substrates

Crystal Research and Technology

Volumn 43, Issue 12, 2008, Pages 1278-1285

  Teubner, Th ^a   Jendritzki, U ^a   Bottcher K ^a   Schadow, G ^a   Heimburger, R ^a   Gerlitzke, A K ^a   Deiter, S ^b   Eisenschmidt, Ch ^b   Boeck, T ^a   Fornari, R ^a   Hanke, M ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

Bismuth; Equipment; Germanium; In situ HRXRD; Pyramids; Sample preparation; Silicon; Solution growth

Indexed keywords

BISMUTH; CRYSTAL GROWTH; EQUIPMENT; FURNACES; GERMANIUM; HEATING; RISK PERCEPTION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS; SPECIFIC HEAT; THERMOANALYSIS;

BEAM LINES; GAS FLOWS; HEAT CAPACITIES; IN SITU HRXRD; IN-SITU; POWER CONSUMPTIONS; PYRAMIDS; SAMPLE PREPARATION; SI SUBSTRATES; SIGE ISLANDS; SOLUTION GROWTH; SOLUTION GROWTHS; SYNCHROTRON BEAM LINES; TEMPERATURE CONTROLLERS; TEMPERATURE FIELDS;

LIQUID PHASE EPITAXY;

EID: 56749178115     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200800290     Document Type: Article

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