X-ray diffractometer for studies on molecular-beam-epitaxy growth of III-V semiconductors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 10, 2002, Pages 6247-6251

  Takahasi, Masamitu ^a   Yoneda, Yasuhiro ^a   Inoue, Hirotane ^b   Yamamoto, Naomasa ^b   Mizuki, Jun'ichiro ^a  

^a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

III V semiconductor; In situ measurement; Molecular beam epitaxy; Surface X ray diffraction; X ray diffractometer

Indexed keywords

COATING TECHNIQUES; CRYSTALLOGRAPHY; DETECTORS; GRAPHITE; HEATING; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SURFACES; X RAY DIFFRACTION ANALYSIS;

IN-SITU MEASUREMENT; SURFACE DIFFRACTOMETER; X RAY BEAM;

SEMICONDUCTOR MATERIALS;

EID: 0036819353     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.6247     Document Type: Article

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