Layer-by-layer growth of GaAs(0 0 1) studied by in situ synchrotron X-ray diffraction

Surface Science

Volumn 525, Issue 1-3, 2003, Pages 126-136

  Braun, Wolfgang ^a   Jenichen, Bernd ^a   Kaganer, Vladimir M ^a   Shtukenberg, Alexander G ^a   Däweritz, Lutz ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Growth; Molecular beam epitaxy; X ray scattering, diffraction, and reflection

Indexed keywords

COMPUTER SIMULATION; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NUCLEATION; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

CRYSTAL TRUNCATIONS;

SURFACE PHENOMENA;

EID: 0037429153     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02551-7     Document Type: Article

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