Room temperature Si(001)-(2 × 1) reconstruction solved by X-ray diffraction

Surface Science

Volumn 375, Issue 1, 1997, Pages 55-62

  Felicia, R ^a   Robinson, I K ^b   Ottaviani, C ^a   Imperatori, P ^a   Eng, P ^b   Perfetti, P ^a  

^a CNR   (Italy)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Keywords: Silicon; Surface relaxation and reconstruction; X ray scattering, diffraction, and reflection

Indexed keywords

CHEMICAL BONDS; MATHEMATICAL MODELS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SURFACE STRUCTURE; SURFACES; X RAY DIFFRACTION;

ASYMMETRIC DIMERS; DISORDERED BUCKLING DIRECTION; SURFACE RECONSTRUCTION; SURFACE RELAXATION; X RAY SCATTERING;

SURFACE TREATMENT;

EID: 0031102862     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0039-6028(97)80005-2     Document Type: Article

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