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Volumn 96, Issue 5, 2010, Pages

In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

(9) Richard, M I a,b Highland, M J a Fister, T T a Munkholm, A c Mei, J c Streiffer, S K a Thompson, Carol d Fuoss, P H a Stephenson, G B a

a ARGONNE NATIONAL LABORATORY (United States)

b AIX MARSEILLE UNIVERSITÉ (France)

c Philips Lumileds Lighting Company (United States)

d NORTHERN ILLINOIS UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION DISTRIBUTIONS; COMPOSITION EVOLUTION; IN-SITU SYNCHROTRONS; INHOMOGENEITIES; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC PROPERTIES; STRAIN STATE; X-RAY RECIPROCAL SPACE MAPPING;

GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; ORGANIC CHEMICALS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 76449099687 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3293441 Document Type: Article

Times cited : (35)

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