Molybdenum atomic layer deposition using MoF6 and Si 2H6 as the reactants

Chemistry of Materials

Volumn 23, Issue 7, 2011, Pages 1668-1678

  Seghete, D ^a   Rayner Jr , G B ^a,c   Cavanagh, A S ^a   Anderson, V R ^a   George, S M ^a,b  

^a UNIVERSITY OF COLORADO   (United States)

^b UCB 450   (United States)

^c Reclaim Facility   (United States)

Author keywords

atomic layer deposition; disilane; fluorosilane elimination; Molybdenum; molybdenum hexafluoride; nucleation

Indexed keywords

ADHESION LAYER; CONDUCTING FILMS; CYCLE NUMBER; DISILANE; ELIMINATION REACTION; EX SITU; FLOW REACTORS; FLUOROSILANES; FOURIER TRANSFORM INFRARED; GLANCING INCIDENCE X-RAY DIFFRACTIONS; HIGH VACUUM; IN-SITU; LINEAR GROWTH; MASS GAIN; NANOCRYSTALLINES; NUCLEATION AND GROWTH; OSCILLATORY BEHAVIORS; OXIDE SURFACE; RAPID NUCLEATION; SILICON IMPURITY; SURFACE SPECIES; TOTAL MASS; ULTRA-THIN; VARYING TEMPERATURE; X RAY REFLECTIVITY;

AMORPHOUS SILICON; ATOMIC LAYER DEPOSITION; ATOMS; AUGER ELECTRON SPECTROSCOPY; CONDUCTIVE FILMS; CRYSTAL IMPURITIES; ECOLOGY; FOURIER TRANSFORMS; GRAIN BOUNDARIES; MOLYBDENUM OXIDE; NUCLEATION; OXIDE FILMS; QUARTZ; QUARTZ CRYSTAL MICROBALANCES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICIDES; SPECTRUM ANALYSIS; SURFACE CHEMISTRY; ULTRATHIN FILMS; VACUUM; VISCOSITY; VISCOUS FLOW; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

MOLYBDENUM;

EID: 79953724066     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm101673u     Document Type: Article

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