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Volumn 21, Issue 15, 2011, Pages 5629-5637

Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers

(10) Lawrie, Kirsten J a Blakey, Idriss a Blinco, James P a,d Cheng, Han Hao a Gronheid, Roel b Jack, Kevin S a Pollentier, Ivan b Leeson, Michael J b,c Younkin, Todd R c Whittaker, Andrew K a

a UNIVERSITY OF QUEENSLAND (Australia)

b IMEC (Belgium)

c INTEL CORPORATION (United States)

d UNIVERSITY OF KARLSRUHE (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

1-PENTENE; ATR FTIR; CHAIN SCISSION; COMPUTER CHIPS; EUV RADIATION; EUV RESISTS; EXTREME ULTRAVIOLET RADIATIONS; HEADSPACE ANALYSIS; HIGH SENSITIVITY; HIGHLY SENSITIVE; NANO-MEMS; PATTERNED FEATURES; RAPID DEGRADATION; SELECTIVE DEGRADATION; STRUCTURAL STABILITIES; SYNTHESIZED POLYMERS;

DEGRADATION; ESTERS; MASS SPECTROMETRY; OLEFINS; PHOTORESISTS; STABILITY;

POLYMERS;

EID: 79953211929 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c0jm03288c Document Type: Article

Times cited : (47)

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