EUV lithography for 22nm half pitch and beyond: Exploring resolution, LWR, and sensitivity tradeoffs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Putna, E Steve ^a   Younkin, Todd R ^a   Caudillo, Roman ^a   Chandhok, Manish ^a  

^a INTEL CORPORATION   (United States)

Author keywords

22nm HP; EUV; EUVL; Extendibility; Extreme Ultraviolet Lithography; Manufacturability; MET; Micro Exposure Tool; Photoresist

Indexed keywords

CURRENT STATUS; EUV LITHOGRAPHY; EUV RESISTS; EUVL; EXTENDIBILITY; HIGH RESOLUTION; HIGH SENSITIVITY; HIGH-RISK AREAS; INTEL CORPORATIONS; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; LEADING TECHNOLOGY; LINEWIDTH ROUGHNESS; MANUFACTURABILITY; MICRO-EXPOSURE TOOL; RESIST PROCESS;

EXPOSURE METERS; EXTREME ULTRAVIOLET LITHOGRAPHY; ROUGHNESS MEASUREMENT; STRATEGIC PLANNING;

LITHOGRAPHY;

EID: 77953394961     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.842408     Document Type: Conference Paper

References (6)

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