Characterization of extreme ultraviolet resists with interference lithography

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1103-1106

  Gronheid, Roel ^a   Solak, Harun H ^b   Ekinci, Yasin ^b   Jouve, Amandine ^c   Van Roey, Frieda ^a  

^a IMEC   (Belgium)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c CEA LETI   (France)

Author keywords

Chemically amplified resists; EUV; Film thickness; Interference lithography; Pattern collapse; PMMA

Indexed keywords

LIGHT INTERFERENCE; LITHOGRAPHY; POLYMETHYL METHACRYLATES; ULTRAVIOLET RADIATION;

CHEMICALLY AMPLIFIED RESISTS; EUV; FILM THICKNESS; INTERFERENCE LITHOGRAPHY; PATTERN COLLAPSE;

PHOTORESISTS;

EID: 33646033152     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.149     Document Type: Article

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