Polycarbonate based nonchemically amplified photoresists for extreme ultraviolet lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Blakey, Idriss ^a   Yu, Anguang ^a   Blinco, James ^a   Jack, Kevin S ^a   Liu, Heping ^a   Leeson, Michael ^b   Yueh, Wang ^b   Younkin, Todd ^b   Whittaker, Andrew K ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b INTEL CORPORATION   (United States)

Author keywords

EUV; Non CAR; non chemically amplified resists; polycarbonates; polymer architecture

Indexed keywords

CHAIN SCISSION; CHEMICALLY AMPLIFIED RESIST; EUV; FULL OPTIMIZATION; IRRADIATION CONDITIONS; MASK-ROUGHNESS; NON-VOLATILE; NONCHEMICALLY AMPLIFIED; OXYGEN CONTENT; PHOTOPRODUCTS; POLYMER ARCHITECTURE; UNIRRADIATED POLYMERS;

CARBON DIOXIDE; CARBON MONOXIDE; CARBONATES; LITHOGRAPHY; OXYGEN; PHOTORESISTS; POLYCARBONATES;

POLYMERS;

EID: 77953395384     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.853620     Document Type: Conference Paper

References (18)

1. Kruit, P., and Steenbrink, S., "Local critical dimension variation from shot-noise related line edge roughness," J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. - Process., Meas., Phenom., 23(6), 3033-3036 (2005). (Pubitemid 41788805)
2. Saeki, A., Kozawa, T., Tagawa, S., and Cao, H. B., "Correlation between proton dynamics and line edge roughness in chemically amplified resist for post-optical lithography," J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. - Process., Meas., Phenom., 24(6), 3066-3072 (2006). (Pubitemid 44866469)
3. Saeki, A., Kozawa, T., Tagawa, S., Cao, H. B., Deng, H., and Leeson, M. J., "Line edge roughness after development in a positive-tone chemically amplified resist of post-optical lithography investigated by Monte Carlo simulation and a dissolution model," Nanotechnology, 19(1), 015705/1-015705/5 (2008).
4. Blakey, I., Chen, L., Goh, Y.-K., Lawrie, K., Chuang, Y.-M., Piscani, E., Zimmerman, P. A., and Whittaker, A. K., "Non-CA resists for 193 nm immersion lithography: effects of chemical structure on sensitivity," Proc. SPIE-Int. Soc. Opt. Eng., 7273, 72733X (2009).
5. Blakey, I., Chen, L., Goh, Y.-K., Piscani, E., Zimmerman, P. A., and Whittaker, A. K., "Exploring Non-CA Resists for 193 nm Immersion Lithography," The International Symposium on Immersion Lithography Extensions, (2008).
6. Whittaker, A. K., Blakey, I., Chen, L., Dargaville, B., Liu, H., Conley, W., and Zimmerman, P. A., "Rational design of high-RI resists for 193-nm immersion lithography," J. Photopolym. Sci. Technol., 20(5), 665-671 (2007).
7. Whittaker, A. K., Blakey, I., Blinco, J., Jack, K. S., Lawrie, K., Liu, H., Yu, A., Leeson, M., Yeuh, W., and Younkin, T., "Development of polymers for non-CAR resists for EUV lithography," Proc. SPIE-Int. Soc. Opt. Eng.,, 7273, 727321 (2009).
8. Gronheid, R., Solak, H. H., Ekinci, Y., Jouve, A., and Van Roey, F., "Characterization of extreme ultraviolet resists with interference lithography," Microelectron. Eng., 83(4-9), 1103-1106 (2006).
9. Jack, K., Liu, H., Blakey, I., Hill, D., Wang, Y., Cao, H., Leeson, M., Denbeaux, G., Waterman, J., and Whittaker, A., "The rational design of polymeric EUV resist materials by QSPR modelling," Proc. SPIE-Int. Soc. Opt. Eng., 6519(Pt. 2, Advances in Resist Materials and Processing Technology XXIV), 65193Z/1-65193Z/8 (2007).
10. Naulleau, P. P., Goldberg, K. A., Anderson, E., Cain, J. P., Denham, P., Jackson, K., Morlens, A.-S., Rekawa, S., and Salmassi, F., "Extreme ultraviolet microexposures at the Advanced Light Source using the 0.3 numerical aperture micro-exposure tool optic," Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena, 22, 2962-2965 (2004).
11. Naulleau, P. P., Niakoula, D., and Zhang, G., "System-level line-edge roughness limits in extreme ultraviolet lithography," Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena, 26(4), 1289-1293 (2008).
12. Fréchet, J. M. J., Bouchard, F., Houlihan, F. M., Eichler, E., Kryczka, B., and Willson, C. G., "Design and synthesis of novel allylic and benzylic copolycarbonates susceptible to acidolytic or thermolytic depolymerization," Makromolekulare Chemie, Rapid Communications, 7(3), 121-126 (1986).
13. Houlihan, F. M., Bouchard, F., Frechet, J. M. J., and Willson, C. G., "Thermally depolymerizable polycarbonates. 2. Synthesis of novel linear tertiary copolycarbonates by phase-transfer catalysis," Macromolecules, 19(1), 13-19 (1986).
14. Frechet, J. M. J., Houlihan, F. M., Bouchard, F., Kryczka, B., and Wilson, C. G., "Design, synthesis, and study of novel, thermally depolymerizable polycarbonates," J. Chem. Soc., Chem. Commun.(21), 1514-16 (1985).
15. Kwark, Y.-J., Bravo-Vasquez, J. P., Chandhok, M., Cao, H., Deng, H., Gullikson, E., and Ober, C. K., "Absorbance measurement of polymers at extreme ultraviolet wavelength: Correlation between experimental and theoretical calculations," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 24(4), 1822-1826 (2006).
16. Kozawa, T., and Tagawa, S., "Theoretical study on chemical gradient generated in chemically amplified resists based on polymer deprotection upon exposure to extreme ultraviolet radiation," Appl. Phys. Express, 2(5), 056503/1-056503/3 (2009).
17. Kozawa, T., and Tagawa, S., "Image formation in chemically amplified resists upon exposure to extreme ultraviolet radiation," Journal of Photopolymer Science and Technology, 22(1), 51-58 (2009).
18. Kozawa, T., and Tagawa, S., "Normalized image log slope with secondary electron migration effect in chemically amplified extreme ultraviolet resists," Appl. Phys. Express, 2(9), 095004/1-095004/3 (2009).