Polysulfone based non-CA resists for 193nm immersion lithography: Effect of increasing polymer absorbance on sensitivity

Radiation Physics and Chemistry

Volumn 80, Issue 2, 2011, Pages 242-247

  Chen, Lan ^a   Goh, Yong Keng ^a   Lawrie, Kirsten ^a   Chuang, Yami ^a   Piscani, Emil ^b   Zimmerman, Paul ^b,c   Blakey, Idriss ^a   Whittaker, Andrew K ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b SEMATECH   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

193nm immersion lithography; Absorbance; Non CAR; Non chemically amplified resists; Polysulfone

Indexed keywords

193NM IMMERSION LITHOGRAPHY; ABSORBANCES; ALLYLBENZENE; CHEMICAL CONTRAST; CHEMICALLY AMPLIFIED RESIST; NON-CAR; NORBORNENES; PHOTOACID GENERATORS; POLYMER BACKBONES;

ACIDS; BIOMATERIALS; ELECTRON BEAM LITHOGRAPHY; POLYMERS; POLYSULFONES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY;

POLYMER FILMS;

2 PROPANOL; POLYMER; POLYSTYRENE; POLYSULFONE;

ABSORPTION; ARTICLE; CHEMICAL PROCEDURES; CHEMICAL STRUCTURE; CONTROLLED STUDY; ELLIPSOMETRY; IMMERSION LITHOGRAPHY; POLYMERIZATION; REFRACTION INDEX; SENSITIVITY ANALYSIS; SPECTRAL SENSITIVITY; SYNTHESIS;

EID: 78649316134     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radphyschem.2010.07.040     Document Type: Article

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