Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography

IBM Journal of Research and Development

Volumn 45, Issue 5, 2001, Pages 683-695

  Ito, H ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBOXYLIC ACIDS; COMPUTER SIMULATION; DISSOLUTION; GEL PERMEATION CHROMATOGRAPHY; MOLECULAR WEIGHT; POLYMERIZATION; POLYOLEFINS; POLYSTYRENES; REACTION KINETICS; SOLUBILITY;

CHEMICALLY AMPLIFIED RESIST; LIVING RADICAL POLYMERIZATION; POLYCYCLOOLEFINS; POLYDISPERSITY; POLYHYDROXYSTYRENE; QUARTZ CRYSTAL MICROBALANCE; SOFTWARE PACKAGE LABVIEW;

PHOTORESISTS;

EID: 0035465710     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.455.0683     Document Type: Article

References (38)

1. New developments in high-performance resist materials
2. Deep UV resists: Evolution and status
3. Chemical amplification resists: History and development within IBM
4. New UV resists with negative or positive tone
5. Chemical amplification in the design of dry developing resist materials
6. Applications of photoinitiators to the design of resists for semiconductor manufacturing
7. Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
8. Progress in 193 nm photoresists
9. Polymers for 157 nm photoresist applications: A progress report
10. 157 nm resist materials: A progress report
11. New materials for 157 nm photoresists: Characterization and properties
12. Design strategies for 157 nm single-layer photoresists: Lithographic evaluation of a poly(α-trifluoromethyl vinyl alcohol) copolymer
13. Fundamental studies of fluoropolymer photoresists for 157-nm lithography
14. Practical half-micron lithography with a 10X KrF excimer laser stepper
15. Evaluation of a new environmentally stable positive tone chemically amplified deep-UV resist
16. Structural design of ketal and acetal blocking groups in 2-component chemically amplified positive DUV-resists
17. Environmentally stable chemical amplification positive resist: Principle, chemistry, contamination resistance, and lithographic feasibility
18. Measurement of thin-film dissolution kinetics using a quartz crystal microbalance
19. The living free radical synthesis of poly(4-hydroxystyrene): Physical properties and dissolution behavior
20. Narrow polydispersity polymers for microlithography: Synthesis and properties
21. Dissolution behavior of phenolic resins and resists as studied by quartz crystal microbalance
22. Dissolution kinetics and PAG interaction of phenolic resins in chemically amplified resists
23. Effect of molecular weight distribution on the dissolution properties of Novolac blends
24. New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices
25. Evaluation of onium salt cationic photoinitiators as novel dissolution inhibitor for Novolac resin
26. NMR analysis of chemically amplified resist films
27. Investigation of deep UV resists by NMR: Residual casting solvents, chemistries, and PAG decomposition in film
28. Acid-catalyzed reactions of tetrahydropyranyl-protected polyvinylphenol in a Novolak-resin-based positive resist
29. Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
30. Acid-catalyzed single-layer resists for ArF lithography
31. Dissolution/swelling behavior of cycloolefin polymers in aqueous base
32. Novolac-based photoresists combining chemical amplification and dissolution inhibition
33. 193 nm single layer positive resists: Building etch resistance into a high resolution imaging system
34. Design and development of high performance 193 nm positive resist based on functionalized poly(cyclicolefins)
35. Synthesis and evaluation of alicyclic backbone polymers for 193 nm lithography
36. New polymers for 193 nm single layer resists based on substituted cycloolefins/maleic anhydride resins
37. A commercially viable 193 nm single layer resist platform
38. General base catalysis, structure-reactivity interactions, and merging of mechanisms for elimination reactions of (2-arylethyl)quinuclidinium ions