Dependence of 20 nm C/H CD windows on critical process parameters

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7639, Issue , 2010, Pages

  Chen, Wei Su ^a   Gu, Pei Yi ^a   Tsai, Ming Jinn ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

CD window; Contact Hole; Develop time; E beam lithography; Post applied baking (PAB)

Indexed keywords

BEAM DOSE; BEAM SCATTERING; CHAIN SCISSION; CONTACT HOLES; CRITICAL PROCESS PARAMETERS; DEVELOP TIME; DRY-ETCH; E-BEAM LITHOGRAPHY; ETCH SELECTIVITY; GLASS TRANSITION TEMPERATURE; PATTERN DENSITY; PROCESS PARAMETERS; PROCESS STABILITY; PROXIMITY EFFECTS; RESIST FILMS; RESIST THICKNESS; SIDEWALL PROFILES; TECHNOLOGY NODES; WINDOW SIZE; ZEP520A;

ELECTRON BEAM LITHOGRAPHY; GLASS TRANSITION;

DATA STORAGE EQUIPMENT;

EID: 77953482001     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846275     Document Type: Conference Paper

References (5)

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4. Schmid, Gerard M., Niyaz Khusnatdinov, Cynthia B. Brooks, Dwayne LaBrake, Ecron Thompson, Douglas J. Resnick, "Minimizing Linewidth Roughness for 22-nm node Patterning with Step-and-Flash Imprint Lithography", Proc. SPIE - Emerging Lithographic Technologies, vol. 6921, pp. 6921091-11 (2008).
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