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Volumn 311, Issue 10, 2009, Pages 3019-3024

Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction

Author keywords

A1. Defects; A1. Morphological stability; A3. Liquid phase epitaxy; B1. Growth from solutions; B1. Nitrides

Indexed keywords

A1. DEFECTS; A1. MORPHOLOGICAL STABILITY; A3. LIQUID PHASE EPITAXY; B1. GROWTH FROM SOLUTIONS; B1. NITRIDES;

EID: 65749091024     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.125     Document Type: Article
Times cited : (71)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.