Photocurrent spectroscopy of a (0 0 0 1)GaN/AlGaN/(1 1 1)Si heterostructure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 787-792

  Kuroiwa, Y ^a   Honda, Y ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

GaN; Heterostructure; MOVPE; Photocurrent spectroscopy

Indexed keywords

BAND STRUCTURE; COMPOSITION; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCURRENTS; PHOTODIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS; THICKNESS MEASUREMENT;

GAN; PHOTOCURRENT SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 1642319048     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.125     Document Type: Conference Paper

References (5)

1. Takeuchi T., Amano H., Hiramatsu K., Sawaki N., Akasaki I. J. Crystal Growth. 115:1991;634.
2. Strittmater A., Krost A., Blasing J., Bimberg D. Phys. Status Sol. A. 176:1999;611.
3. Kobayashi N.P., Kobayashi J.T., Dapkus P.D., Choi W.J., Bond A.E., Zhang X., Rich D.H. Appl. Phys. Lett. 71:1997;3569.
4. Honda Y., Kuroiwa Y., Yamaguchi M., Sawaki N. Appl. Phys. Lett. 80:2002;222.
5. Tanaka S., Kawaguchi Y., Sawaki N., Hibino M., Hiramatsu K. Appl. Phys. Lett. 76:2000;2701.