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Volumn 43, Issue 4 A, 2004, Pages

Growth of thick GaN films with high growth rate using sublimation method under high pressure

Author keywords

Decomposition rate; GaN; Growth rate; High pressure; Sublimation method

Indexed keywords

BORON COMPOUNDS; DECOMPOSITION; HIGH PRESSURE EFFECTS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SUBLIMATION; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

EID: 2942585304     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l486     Document Type: Article
Times cited : (5)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.