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Volumn 43, Issue 4 A, 2004, Pages
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Growth of thick GaN films with high growth rate using sublimation method under high pressure
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Author keywords
Decomposition rate; GaN; Growth rate; High pressure; Sublimation method
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Indexed keywords
BORON COMPOUNDS;
DECOMPOSITION;
HIGH PRESSURE EFFECTS;
LIGHT EMITTING DIODES;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SAPPHIRE;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR LASERS;
SUBLIMATION;
VAPOR PHASE EPITAXY;
X RAY DIFFRACTION ANALYSIS;
BORON NITRIDES;
DECOMPOSITION RATES;
FLUX GROWTH;
GROWTH RATES;
GALLIUM NITRIDE;
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EID: 2942585304
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.43.l486 Document Type: Article |
Times cited : (5)
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References (8)
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