Resolution, line-edge roughness, sensitivity tradeoff, and quantum yield of high photo acid generator resists for extreme ultraviolet lithography

Japanese Journal of Applied Physics

Volumn 50, Issue 3, 2011, Pages

  Higgins, Craig D ^a   Szmanda, Charles R ^b   Antohe, Alin ^a   Denbeaux, Greg ^a   Georger, Jacque ^c   Brainard, Robert L ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b Patent Practice of Szmanda and Shelnut   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; CORRELATION COEFFICIENT; EXPERIMENTAL DATA; EXTREME ULTRAVIOLETS; FIGURES OF MERITS; IODONIUM; LINE EDGE ROUGHNESS; MODEL FIT; NONIONIC; PHOTO-DECOMPOSITION; PHOTOACID GENERATORS; THREE PARAMETERS; Z-PARAMETERS;

FILM PREPARATION; MATHEMATICAL MODELS; PHENOLS; QUANTUM YIELD;

PHOTORESISTORS;

EID: 79953090960     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.036504     Document Type: Article

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