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Applied Surface Science

Volumn 257, Issue 14, 2011, Pages 6197-6201

Effect of different electrolytes on porous GaN using photo-electrochemical etching

(3) Al Heuseen, K a Hashim, M R a Ali, N K b

a SCHOOL OF PHYSICS (Malaysia)

b UNIVERSITI TEKNOLOGI MALAYSIA (Malaysia)

Author keywords

Electrolyte; Gan; Photo electrochemical etching; Porosity

Indexed keywords

ELECTROLYTES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; POROSITY; POTASSIUM HYDROXIDE; SCANNING ELECTRON MICROSCOPY;

PEAK INTENSITY; PEAK POSITION; PHOTO ELECTROCHEMICAL ETCHINGS; PHOTO-ELECTROCHEMICAL ETCHING; PHOTOLUMINESCENCE SPECTRUM; RELAXATION OF STRESS; SCANNING ELECTRON MICROSCOPY IMAGE; SINGLE-CRYSTALLINE;

ELECTROCHEMICAL ETCHING;

EID: 79953025027 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.02.031 Document Type: Article

Times cited : (56)

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