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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 136-141

Luminescence and structural properties of porous silicon with ZnSe intimate contact

(2) Montes L a Herino R a

a LIPHY (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTALLIZATION; ELECTRODEPOSITION; IMPREGNATION; MICROANALYSIS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROUS SILICON; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROCHEMICAL CO-DEPOSITION; LUMINESCENT POROUS SILICON LAYERS;

SEMICONDUCTING SILICON;

EID: 0342588056 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00234-2 Document Type: Article

Times cited : (10)

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