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Volumn 405, Issue 15, 2010, Pages 3176-3179

Enhanced optical properties of porous GaN by using UV-assisted electrochemical etching

Author keywords

Electrochemical etching; Photoluminescence; Porous GaN; Raman spectroscopy

Indexed keywords

CURRENT DENSITY; DOPPLER EFFECT; ELECTROCHEMICAL PROPERTIES; ETHANOL; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY;

EID: 77954315601     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.04.043     Document Type: Article
Times cited : (33)

References (29)
  • 18
    • 0242608482 scopus 로고    scopus 로고
    • J. Risti, et al., Phys. Rev. B 68 (2003) 125305.
    • (2003) Phys. Rev. B , vol.68 , pp. 125305
    • Risti, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.