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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 28, Issue 2, 2005, Pages 141-149

Investigation of optical properties of nanoporous GaN films

(4) Vajpeyi, A P a Tripathy, S b Chua, S J a,b Fitzgerald, E A a,c

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

c Massachusetts Institute of Technology Cambridge (United States)

Author keywords

Nanoporous GaN; Photoluminescence; Raman scattering

Indexed keywords

EPITAXIAL GROWTH; ETCHING; FILMS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; MICROSTRUCTURE; MORPHOLOGY; PHONONS; PHOTOLUMINESCENCE; POROUS MATERIALS; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; STRESS RELAXATION; ULTRAVIOLET RADIATION;

MICRO-PHOTOLUMINESCENCE; NANOPOROUS GAN; PHOTOLUMINESCENCE (PL) INTENSITY; PORE MORPHOLOGY;

NANOSTRUCTURED MATERIALS;

EID: 19944416922 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2005.03.007 Document Type: Article

Times cited : (95)

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